Impact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cells

Journal of Applied Physics

Volumn 106, Issue 11, 2009, Pages

  Menke, T ^a   Dittmann, R ^a   Meuffels, P ^a   Szot, K ^a   Waser, R ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EXPERIMENTS; ATMOSPHERIC CONDITIONS; CLOSED SYSTEMS; DEVICE RESISTANCE; DEVICE STABILITY; FE-DOPED; FORMING PROCESS; METAL INSULATOR METALS; MIM-STRUCTURES; MODERATE TEMPERATURE; PENETRATION DEPTH; RE-OXIDATION; RELAXATION EFFECT; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; RETENTION MEASUREMENT; SRTIO; THERMAL STABILITY;

ELECTROCHEMISTRY; ELECTROFORMING; ELECTROMETALLURGY; METAL INSULATOR BOUNDARIES; NIOBIUM; OXYGEN; OXYGEN VACANCIES; STRONTIUM ALLOYS; SWITCHING SYSTEMS; SYSTEM STABILITY; THERMODYNAMIC STABILITY;

MIM DEVICES;

EID: 72449160096     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3267485     Document Type: Article

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