Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)

Microelectronic Engineering

Volumn 85, Issue 12, 2008, Pages 2425-2429

  Lamperti, A ^a   Spiga, S ^a   Lu, H L ^a   Wiemer, C ^a   Perego, M ^a   Cianci, E ^a   Alia, M ^a   Fanciulli, M ^a,b  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

Grazing incidence X ray diffraction; Nickel oxide; Resistive switching; Time of flight secondary ion mass spectrometry; X ray reflectivity

Indexed keywords

ATOMIC LAYER DEPOSITION; CHEMICAL MODIFICATION; DIFFRACTION; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; FILM GROWTH; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; MASS SPECTROMETERS; MASS SPECTROMETRY; NICKEL; NICKEL ALLOYS; NICKEL OXIDE; PHASE INTERFACES; PHYSICAL VAPOR DEPOSITION; PLATINUM; POSITION CONTROL; PULSED LASER DEPOSITION; RANDOM ACCESS STORAGE; REFLECTION; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPECTROMETERS; SPECTROMETRY; SPECTRUM ANALYSIS; SUBSTRATES; SWITCHING; SWITCHING SYSTEMS; THICK FILMS; THIN FILMS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

APPLIED FIELDS; ATOMIC LAYER DEPOSITION (ALD; BEAM DEPOSITIONS; ELECTRICAL SWITCHING; ELECTRON DENSITIES; EXTERNAL-; GRAZING INCIDENCE X-RAY DIFFRACTION; GRAZING INCIDENCES; GROWTH PROCESSES; INTERFACE SHARPNESSES; NIO FILMS; NIO THIN FILMS; POLYCRYSTAL LINES; RESISTIVE RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING; SIMS PROFILES; SWITCHING PHENOMENONS; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMETRIES; X-RAY DIFFRACTIONS; X-RAY REFLECTIVITIES; X-RAY REFLECTIVITY;

ELECTROMAGNETIC WAVES;

EID: 56649092816     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.09.039     Document Type: Article

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