In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides

Micron

Volumn 41, Issue 4, 2010, Pages 301-305

  Gao, Peng ^a   Wang, Zhenzhong ^a   Fu, Wangyang ^a   Liao, Zhaoliang ^a   Liu, Kaihui ^a   Wang, Wenlong ^a   Bai, Xuedong ^a   Wang, Enge ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

CeO2; In situ TEM; Microscopic mechanism; Oxygen vacancy migration; Resistance change effect

Indexed keywords

CERIUM OXIDES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; IN-SITU; IN-SITU TEM; IN-SITU TRANSMISSION; INDUCED RESISTANCE; MEMORY DEVICE; METAL OXIDES; MICROSCOPIC DYNAMICS; MICROSCOPIC MECHANISMS; MIXED VALENCE; OXIDE MATERIALS; OXYGEN MIGRATION; OXYGEN VACANCY MIGRATION; PEROVSKITE OXIDES; RESISTANCE CHANGE; RESISTANCE CHANGE EFFECTS; RESISTANCE SWITCHING EFFECT; STRUCTURE CHANGE;

CERIUM; ELECTRIC FIELDS; ELECTRIC RESISTANCE; ELECTRON MICROSCOPES; IN SITU PROCESSING; OXIDE MINERALS; OXYGEN; PEROVSKITE; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES;

OXYGEN VACANCIES;

EID: 77949490078     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2009.11.010     Document Type: Article

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