SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 550, Issue , 2014, Pages 683-688

Building memristive and radiation hardness TiO2-based junctions

(8) Ghenzi, N a Rubi, D a,b,c Mangano, E d Gimenez, G d Lell, J a Zelcer, A a,b Stoliar, P b,e Levy, P a,c

a DEPARTAMENTO DE FÍSICA (Argentina)

b UNIVERSIDAD NACIONAL DE SAN MARTÍN (Argentina)

c Facultad de Ciencias Naturales e Instituto M Lillo (Argentina)

d INSTITUTO NACIONAL DE TECNOLOGÍA INDUSTRIAL (Argentina)

e UNIVERSITÉ DE NANTES (France)

Author keywords

Memristive; Non volatile memories; Radiation hardness; Resistive switching

Indexed keywords

ELECTRICAL CHARACTERIZATION; ELECTRICAL MEASUREMENT; IRRADIATED DEVICES; MEMRISTIVE; NON-VOLATILE MEMORY; RADIATION HARDNESS; RESISTIVE RANDOM-ACCESS MEMORY; RESISTIVE SWITCHING;

HARDNESS; TITANIUM DIOXIDE;

ELECTRIC PROPERTIES;

EID: 84890309638 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2013.11.013 Document Type: Article

Times cited : (12)

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