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Volumn 113, Issue 16, 2013, Pages

Impact of Joule heating on the microstructure of nanoscale TiO2 resistive switching devices

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE OPERATIONS; HIGH-RESOLUTION TEM; LOW-POWER DISSIPATION; MAXIMUM TEMPERATURE; MICROSTRUCTURAL CHANGES; MORPHOLOGICAL CHANGES; RESISTIVE SWITCHING DEVICES; SCANNING ELECTRONS;

EID: 84877262939     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4803033     Document Type: Article
Times cited : (34)

References (19)
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    • A. Sawa, Mater. Today 11, 28 (2008). 10.1016/S1369-7021(08)70119-6
    • (2008) Mater. Today , vol.11 , pp. 28
    • Sawa, A.1
  • 2
    • 36849125984 scopus 로고
    • 10.1063/1.1702530
    • T. W. Hickmott, J. Appl. Phys. 33, 2669 (1962). 10.1063/1.1702530
    • (1962) J. Appl. Phys. , vol.33 , pp. 2669
    • Hickmott, T.W.1
  • 14
    • 77955532116 scopus 로고    scopus 로고
    • 10.4028/www.scientific.net/KEM.437.598
    • A. Koochekzadeh, Key Eng. Mater. 437, 598 (2010). 10.4028/www.scientific. net/KEM.437.598
    • (2010) Key Eng. Mater. , vol.437 , pp. 598
    • Koochekzadeh, A.1
  • 16
    • 0000748626 scopus 로고
    • 10.1139/v61-059
    • C. N. Rao, Can. J. Chem. 39, 498 (1961). 10.1139/v61-059
    • (1961) Can. J. Chem. , vol.39 , pp. 498
    • Rao, C.N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.