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Volumn 100, Issue 23, 2012, Pages

Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO 3-x-based nanoionics devices

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; NANOIONICS; OXYGEN MIGRATION; OXYGEN-RICH ATMOSPHERES; PT ELECTRODE; RESISTANCE SWITCHING;

EID: 84862138489     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4726084     Document Type: Article
Times cited : (44)

References (25)
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    • 5 cover layer deposited on the toof Pt toelectrode
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  • 23
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.