Silicon surface passivation by sputtered aluminium oxide: Influence of annealing temperature and ambient gas

ECS Solid State Letters

Volumn 3, Issue 11, 2014, Pages N37-N39

  Zhang, Xinyu ^a   Thomson, Andrew ^a   Cuevas, Andres ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; ANNEALING; CHEMICAL ACTIVATION; OXIDE FILMS; OXIDES; REACTION KINETICS; SILICON;

ACTIVATION ENERGY E; ANNEALING PROCESS; ANNEALING TEMPERATURES; CRYSTALLINE SILICON SURFACES; DEPOSITION METHODS; RADIO FREQUENCIES; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

PASSIVATION;

EID: 84924052386     PISSN: 21628742     EISSN: 21628750     Source Type: Journal    
DOI: 10.1149/2.0021412ssl     Document Type: Article

References (35)

1. G. Agostinelli, A. Delabie, P. Vitanov, Z. Alexieva, H. F. W. Dekkers, S. De Wolf, and G. Beaucarne, Sol. Energ. Mat. and Sol., 90, 3438 (2006).
2. B. Hoex, J. Schmidt, P. Pohl, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys., 104, 044903 (2008).
3. G. Dingemans and W. M. M. Kessels, J. Vac. Sci. Technol. A, 30, 040802 (2012).
4. G. Dingemans,R. Seguin, P. Engelhart,M. C. M. v. d. Sanden, andW. M. M. Kessels, phys. status solidi (RRL), 4, 10 (2010).
5. G. Dingemans, M. C. M. van de Sanden, and W. M. M. Kessels, Electrochem. Solid. St., 13, H76 (2010).
6. X. Zhang and A. Cuevas, phys. status solidi (RRL), 7, 619 (2013).
7. P. Saint-Cast, D. Kania, M. Hofmann, J. Benick, J. Rentsch, and R. Preu, Appl. Phys. Lett., 95, 151502 (2009).
8. A. Richter, J. Benick, M. Hermle, and S. W. Glunz, phys. status solidi (RRL), 5, 202 (2011).
9. B. Hoex, J. J. H. Gielis, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys., 104, 113703 (2008).
10. F. Werner, B. Veith, D. Zielke, L. Kühnemund, C. Tegenkamp, M. Seibt, R. Brendel, and J. Schmidt, J. Appl. Phys., 109, 113701 (2011).
11. L. E. Black and K. R. McIntosh, Appl. Phys. Lett., 100, 202107 (2012).
12. X. Zhang, A. Cuevas, and A. Thomson, IEEE J. Photovoltaics, 3, 183 (2013).
13. G. Dingemans, N. M. Terlinden, D. Pierreux, H. B. Profijt, M. C. M. van de Sanden, and W. M. M. Kessels, Electrochem. Solid. St., 14, H1 (2011).
14. W. Liang, K. Weber, S. Dongchul, S. Phang, Y. Jun, A. McAuley, and B. Legg, IEEE J. Photovoltaics, 3, 678 (2013).
15. R. L. Puurunen, J. Appl. Phys., 97, 121301 (2005).
16. AIR LIQUIDE, MSDS: TriMethylAluminium (2014).
17. E. Simoen, A. Rothschild, B. Vermang, J. Poortmans, and R. Mertens, Electrochem. Solid. St., 14, H362 (2011).
18. S. Miyajima, J. Irikawa, A. Yamda, and M. Konagai, Appl. Phys. Express, 3, 012301 (2010).
19. A. T. Li, PhD Thesis, in Research School of Engineering, The Australian National University (2010).
20. M. Bhaisare, A. Misra, and A. Kottantharayil, IEEE J. Photovoltaics, 3, 930 (2013).
21. A. Richter, J. Benick, M. Hermle, and S. W. Glunz, Appl. Phys. Lett., 104, 061606 (2014).
22. G. Dingemans, F. Einsele,W. Beyer, M. C. M. van de Sanden, andW. M. M. Kessels, J. Appl. Phys., 111, 093713 (2012).
23. B. Kafle, S. Kuehnhold, W. Beyer, S. Lindekugel, P. Saint-Cast, M. Hofmann, and J. Rentsch, in 27th EUPVSEC (2012).
24. R. A. Sinton and A. Cuevas, Appl. Phys. Lett., 69, 2510 (1996).
25. A. Richter, S. W. Glunz, F. Werner, J. Schmidt, and A. Cuevas, Phys. Rev. B, 86, 165202 (2012).
26. G. Dingemans, W. Beyer, M. C. M. van de Sanden, and W. M. M. Kessels, Appl. Phys. Lett., 97, 152106 (2010).
27. V. Verlaan, L. R. J. G. van den Elzen, G. Dingemans, M. C. M. van de Sanden, and W. M. M. Kessels, phys. status solidi C, 7, 976 (2010).
28. P. Saint-Cast, PhD Thesis, University of Konstanz (2012).
29. X. Zhang, S. Hargreaves, Y. Wan, and A. Cuevas, phys. status solidi (RRL), 8, 231 (2014).
30. P. N. K. Deenapanray, F. D. Auret, and G. Myburg, J. Vac. Sci. Technol. B, 16, 1873 (1998).
31. U. Bengert, P. J. Goodhew, C. Jeynes, and I. H. Wilson, J. Phys. D: Appl. Phys., 19, 589 (1986).
32. F. D. Auret, S. M. M. Coelho,G. Myburg, P. J. Janse van Rensburg, andW. E. Meyer, Physica B, 404, 4376 (2009).
33. H. J. Quah, K. Y. Cheong, Z. Hassan, Z. Lockman, F. A. Jasni, and W. F. Lim, J. Electrochem. Soc., 157, H6 (2010).
34. J. Mitchell, D. Macdonald, and A. Cuevas, Appl. Phys. Lett., 94, 162102 (2009).
35. D. Fink, J. Krauser, D. Nagengast, T. A. Murphy, J. Erxmeier, L. Palmetshofer, D. Bräunig, and A. Weidinger, Appl. Phys. A, 61, 381 (1995).