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Physica B: Condensed Matter

Volumn 404, Issue 22, 2009, Pages 4376-4378

Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

(5) Auret, F D a Coelho, S M M a Myburg, G a Janse van Rensburg, P J a Meyer, W E a

a UNIVERSITY OF PRETORIA (South Africa)

Author keywords

Annealing; Ar plasma etching; Defects; DLTS; Germanium

Indexed keywords

ANNEALING PROPERTIES; AR PLASMAS; DETECTION LIMITS; DLTS; ENERGY LEVEL; ETCH PROCESS; ETCHING DEFECTS; GAAS; GE SURFACES; HIGHER ORDER; INP; INTERSTITIAL CLUSTERS; INTERSTITIALS; LOW ENERGIES; PER UNIT LENGTH; SB-DOPED; SINGLE VACANCIES;

ANNEALING; ARGON; DEFECTS; DEPTH PROFILING; ELECTRON MOBILITY; GALLIUM ALLOYS; GERMANIUM; PLASMA ETCHING; PLASMAS; VACANCIES;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 71749095094 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2009.09.028 Document Type: Article

Times cited : (9)

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