Electrical characterization and annealing behavior of defect introduced in Si during sputter etching in an Ar plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 1873-1880

  Deenapanray, P N K ^a,b   Auret, F D ^a   Myburg, G ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038027473     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590100     Document Type: Article

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