Impact of forming gas annealing and firing on the Al2O 3/p-Si interface state spectrum

Electrochemical and Solid-State Letters

Volumn 14, Issue 9, 2011, Pages

  Simoen, E ^a   Rothschild, A ^a   Vermang, B ^a,b   Poortmans, J ^a,b   Mertens, R ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF INTERFACE STATE; FORMING GAS; FORMING GAS ANNEALING; INTERFACE PROPERTY; INTERFACE STATE; METAL OXIDE SEMICONDUCTOR;

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIELECTRIC DEVICES; SILICON; SILICON COMPOUNDS;

MOS CAPACITORS;

EID: 79960268771     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3597661     Document Type: Article

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