Aluminum oxide deposited by pulsed-DC reactive sputtering for crystalline silicon surface passivation

IEEE Journal of Photovoltaics

Volumn 3, Issue 3, 2013, Pages 930-935

  Bhaisare, Meenakshi ^a   Misra, Abhishek ^a   Kottantharayil, Anil ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Aluminum oxide; crystalline silicon solar cells; pulsed dc reactive sputtering; surface passivation

Indexed keywords

ALUMINUM OXIDES; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CRYSTALLINE SILICON SURFACES; CRYSTALLINE SILICONS; POST DEPOSITION ANNEALING; PULSED DC; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

ANNEALING; DESCALING; PHOTOELECTRONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDES;

EID: 84880053979     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2251057     Document Type: Article

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