Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3

Applied Physics Letters

Volumn 104, Issue 6, 2014, Pages

  Richter, Armin ^a   Benick, Jan ^a   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; ASSOCIATION REACTIONS; ATOMIC LAYER DEPOSITION; CARRIER LIFETIME; CHEMICAL ACTIVATION; DEPOSITION; PASSIVATION; REACTION RATES;

ACTIVATION ENERGY E; ATOMIC LAYER DEPOSITED; CRYSTALLINE SILICONS; DEPOSITION TEMPERATURES; EFFECTIVE CARRIER LIFETIMES; HYDROGEN CONCENTRATION; POST DEPOSITION TREATMENT; SURFACE PASSIVATION;

REACTION KINETICS;

EID: 84924026024     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4865901     Document Type: Article

References (35)

1. G. Agostinelli, A. Delabie, P. Vitanov, Z. Alexieva, H. F. W. Dekkers, S. De Wolf, and G. Beaucarne, Sol. Energy Mater. Sol. Cells 90, 3438 (2006). 10.1016/j.solmat.2006.04.014
2. G. Dingemans, M. C. M. van de Sanden, and W. M. M. Kessels, Electrochem. Solid-State Lett. 13, H76 (2010). 10.1149/1.3276040
3. B. Hoex, J. Schmidt, P. Pohl, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys. 104, 044903 (2008). 10.1063/1.2963707
4. A. Richter, J. Benick, M. Hermle, and S. W. Glunz, Phys. Status Solidi RRL 5-6, 202 (2011). 10.1002/pssr.201105188
5. A. Richter, S. W. Glunz, F. Werner, J. Schmidt, and A. Cuevas, Phys. Rev. B 86, 165202 (2012). 10.1103/PhysRevB.86.165202
6. J. Benick, A. Richter, T. T. A. Li, N. Grant, K. R. McIntosh, Y. Ren, K. J. Weber, M. Hermle, and S. W. Glunz, in Proceedings of the 35th IEEE Photovoltaic Specialists Conference, Honolulu, USA, 2010.
7. R. Hezel and K. Jaeger, J. Electrochem. Soc. 136 (2), 518 (1989). 10.1149/1.2096673
8. B. Hoex, J. J. H. Gielis, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys. 104, 113703 (2008). 10.1063/1.3021091
9. P. Saint-Cast, D. Kania, M. Hofmann, J. Benick, J. Rentsch, and R. Preu, Appl. Phys. Lett. 95, 151502 (2009). 10.1063/1.3250157
10. F. Werner, B. Veith, D. Zielke, L. Kühnemund, C. Tegenkamp, M. Seibt, R. Brendel, and J. Schmidt, J. Appl. Phys. 109, 113701 (2011). 10.1063/1.3587227
11. L. E. Black and K. R. McIntosh, Appl. Phys. Lett. 100, 202107 (2012). 10.1063/1.4718596
12. T.-T. Li and A. Cuevas, Phys. Status. Solidi. RRL 3 (5), 160 (2009). 10.1002/pssr.200903140
13. J. Benick, A. Richter, M. Hermle, and S. W. Glunz, Phys. Status. Solidi. RRL 3 (7-8), 233 (2009). 10.1002/pssr.200903209
14. G. Dingemans, P. Engelhart, R. Seguin, F. Einsele, B. Hoex, M. C. M. van de Sanden, and W. M. M. Kessels, J. Appl. Phys. 106, 114907 (2009). 10.1063/1.3264572
15. J. Ziegler, M. Otto, A. N. Sprafke, and R. B. Wehrspohn, Appl. Phys. A 113, 285 (2013). 10.1007/s00339-013-7943-5
16. G. Dingemans, N. M. Terlinden, D. Pierreux, H. B. Profijt, M. C. M. van de Sanden, and W. M. M. Kessels, Electrochem. Solid-State Lett. 14 (1), H1 (2011). 10.1149/1.3501970
17. F. Duerinckx and J. Szlufcik, Sol. Energy Mater. Sol. Cells 72 (1-4), 231 (2002). 10.1016/S0927-0248(01)00170-2
18. J. Mitchell, D. Macdonald, and A. Cuevas, Appl. Phys. Lett. 94, 162102 (2009). 10.1063/1.3120765
19. G. Dingemans, W. Beyer, M. C. M. van de Sanden, and W. M. M. Kessels, Appl. Phys. Lett. 97, 152106 (2010). 10.1063/1.3497014
20. R. A. Sinton and A. Cuevas, Appl. Phys. Lett. 69 (17), 2510 (1996). 10.1063/1.117723
21. H. Nagel, C. Berge, and A. G. Aberle, J. Appl. Phys. 86 (11), 6218 (1999). 10.1063/1.371633
22. A. B. Sproul, J. Appl. Phys. 76 (5), 2851 (1994). 10.1063/1.357521
23. G. Dingemans, F. Einsele, W. Beyer, M. C. M. Sanden, and W. M. M. Kessels, J. Appl. Phys. 111, 093713 (2012). 10.1063/1.4709729
24. S. De Wolf, S. Olibet, and C. Ballif, Appl. Phys. Lett. 93 (032101), 032101 (2008) 10.1063/1.2956668.
25. P. Saint-Cast, Ph.D. dissertation, University Konstanz, 2012.
26. A. Stesmans, Appl. Phys. Lett. 68 (15), 2076 (1996). 10.1063/1.116308
27. A. Richter, J. Benick, and M. Hermle, IEEE J. Photovoltaics 3 (1), 236 (2013). 10.1109/JPHOTOV.2012.2226145
28. Y. Catherine and A. Talebian, J. Electron. Mater. 17 (2), 127 (1988). 10.1007/BF02652142
29. A. R. Chowdhuri, C. G. Takoudis, R. F. Klie, and N. D. Browning, Appl. Phys. Lett. 80 (22), 4241 (2002). 10.1063/1.1483903
30. Y.-C. Kim, H.-H. Park, J. S. Chun, and W.-J. Lee, Thin Solid Films 237, 57 (1994). 10.1016/0040-6090(94)90238-0
31. K. T. Queeney, M. K. Weldon, J. P. Chang, Y. J. Chabal, A. B. Gurevich, J. Sapjeta, and R. L. Opila, J. Appl. Phys. 87 (3), 1322 (2000). 10.1063/1.372017
32. D. N. Goldstein, J. A. McCormick, and S. M. George, J. Phys. Chem. C 112, 19530 (2008). 10.1021/jp804296a
33. E. Langereis, J. Keijmel, M. C. M. van de Sanden, and W. M. M. Kessels, Appl. Phys. Lett. 92, 231904 (2008). 10.1063/1.2940598
34. V. Verlaan, L. R. J. G. van den Elzen, G. Dingemans, M. C. M. van de Sanden, and W. M. M. Kessels, Phys. Status Solidi C 7 (3-4), 976 (2010) 10.1002/pssc.200982891.
35. B. E. Deal, J. Electrochem. Soc. 116 (7), 997 (1969). 10.1149/1.2412205