Skin effect of on-chip copper interconnects on electromigration

Solid-State Electronics

Volumn 46, Issue 12, 2002, Pages 2269-2272

  Wu, W ^a   Yuan, J S ^a  

^a University of Central Florida   (United States)

Author keywords

Copper interconnect; Electromigration; Mean time to failure; Reduced vacancy concentration; Skin effect

Indexed keywords

COPPER; ELECTRIC CONNECTORS; ELECTRIC CURRENT DISTRIBUTION; ELECTROMIGRATION; MATHEMATICAL MODELS; VLSI CIRCUITS;

COPPER INTERCONNECTS;

SKIN EFFECT;

EID: 0036891198     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00232-0     Document Type: Article

References (7)

1. Chang L, Chang K, Mathews R. Proceedings on 2000 International Symposium on Packaging Design (ISPD 2000), San Diego, CA, p. 117-20.
2. Black J.R. IEEE Trans. Electron Dev. ED-16:1969;338.
3. Lane M., Dauskardt R.H. J. Mater. Res. 15(1):2000;203.
4. Wu W., Yuan J.S. Solid-State Electron. 45(12):2001;2011.
5. Balanis C.A. Advanced engineering electromagnetics. 1989;John Wiley, New York.
6. McCusker N.D., Gamble H.S., Armestrong B.M. Microelectron. Reliab. 40:2000;69.
7. Wu W., Yuan J.S., Kang S.H., Oates A.S. Solid-State Electron. 45(12):2001;2051.