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Chemical Physics Letters

Volumn 375, Issue 3-4, 2003, Pages 388-392

Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates

(6) Huh, Y a Lee, J Y a Lee, J H b Lee, T J c Lyu, S C c Lee, C J c

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

c Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037866585 PISSN: 00092614 EISSN: None Source Type: Journal
DOI: 10.1016/S0009-2614(03)00869-8 Document Type: Article

Times cited : (40)

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