Use of carbon nanotubes for VLSI interconnects

Diamond and Related Materials

Volumn 18, Issue 5-8, 2009, Pages 957-962

  Robertson, J ^a   Zhong, G ^a   Hofmann, S ^a   Bayer, B C ^a   Esconjauregui, C S ^a   Telg, H ^b   Thomsen, C ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Carbon nanotubes; Chemical vapour deposition; Electronic applications; Growth

Indexed keywords

CHARACTERISATION; CHEMICAL VAPOUR DEPOSITION; ELECTRONIC APPLICATIONS; GROWTH; GROWTH TECHNIQUES; METAL SUBSTRATE; VLSI INTERCONNECTS;

CHEMICAL VAPOR DEPOSITION; INTEGRATED CIRCUITS;

CARBON NANOTUBES;

EID: 67349203984     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.02.008     Document Type: Article

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