메뉴 건너뛰기




Volumn 6, Issue , 2015, Pages

Carrier density modulation in a germanium heterostructure by ferroelectric switching

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM DERIVATIVE; BARIUM TITANATE; GERMANIUM; UNCLASSIFIED DRUG;

EID: 84923112566     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms7067     Document Type: Article
Times cited : (74)

References (47)
  • 1
    • 77955345514 scopus 로고    scopus 로고
    • Ferroelectric field effect transistor for memory applications
    • Hoffman, J. et al. Ferroelectric field effect transistor for memory applications. Adv. Mater. 22, 2957-2961 (2010).
    • (2010) Adv. Mater. , vol.22 , pp. 2957-2961
    • Hoffman, J.1
  • 2
    • 4244101024 scopus 로고    scopus 로고
    • Crystalline oxides on silicon: The first five unit cells
    • McKee, R. A., Walker, F. J. & Chisholm, M. F. Crystalline oxides on silicon: the first five unit cells. Phys. Rev. Lett. 81, 3014-3017 (1998).
    • (1998) Phys. Rev. Lett. , vol.81 , pp. 3014-3017
    • McKee, R.A.1    Walker, F.J.2    Chisholm, M.F.3
  • 3
    • 0035794335 scopus 로고    scopus 로고
    • 3 on Si and its nanoscale piezoelectric properties
    • 3 on Si and its nanoscale piezoelectric properties. Appl. Phys. Lett. 78, 2034-2036 (2001).
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 2034-2036
    • Lin, A.1
  • 4
    • 34249894423 scopus 로고    scopus 로고
    • 3 buffered (001) Si by molecular beam epitaxy
    • 3 buffered (001) Si by molecular beam epitaxy. Vac. Sci. Technol. B 25, 1053-1057 (2007).
    • (2007) Vac. Sci. Technol. B , vol.25 , pp. 1053-1057
    • Niu, F.1    Wessels, B.W.J.2
  • 5
    • 33746842197 scopus 로고    scopus 로고
    • 3 films on (001) Si
    • 3 films on (001) Si. J. Appl. Phys. 100, 024108-024109 (2006).
    • (2006) J. Appl. Phys. , vol.100 , pp. 024108-024109
    • Vaithyanathan, V.1
  • 6
    • 79958058743 scopus 로고    scopus 로고
    • 3 buffer layer for non-volatile memory application
    • 3 buffer layer for non-volatile memory application. Microelectron. Eng. 88, 1232-1235 (2011).
    • (2011) Microelectron. Eng. , vol.88 , pp. 1232-1235
    • Niu, G.1
  • 7
    • 84885474361 scopus 로고    scopus 로고
    • 3 films on silicon without a conducting bottom electrode
    • 3 films on silicon without a conducting bottom electrode. Nat. Nanotechnol. 8, 748-754 (2013).
    • (2013) Nat. Nanotechnol. , vol.8 , pp. 748-754
    • Dubourdieu, C.1
  • 8
    • 0000810313 scopus 로고
    • Phase transition, stability and depolarization field in ferroelectric thin films
    • Batra, I. P., Wurfel, P. & Silverman, B. D. Phase transition, stability and depolarization field in ferroelectric thin films. Phys. Rev. B 8, 3257-3265 (1973).
    • (1973) Phys. Rev. B , vol.8 , pp. 3257-3265
    • Batra, I.P.1    Wurfel, P.2    Silverman, B.D.3
  • 9
    • 0038580988 scopus 로고    scopus 로고
    • 3 epitaxial films for ferroelectric-gate field-effect transistors
    • 3 epitaxial films for ferroelectric-gate field-effect transistors. J. Appl. Phys. 93, 5563-5567 (2003).
    • (2003) J. Appl. Phys. , vol.93 , pp. 5563-5567
    • Ito, D.1    Fujimura, N.2    Yoshimura, T.3    Ito, T.4
  • 10
    • 23044522510 scopus 로고    scopus 로고
    • Epitaxial oxide thin films on Si(100)
    • Yu, Z. et al. Epitaxial oxide thin films on Si(100). J. Vac. Sci. Technol. B 18, 2139-2145 (2000).
    • (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 2139-2145
    • Yu, Z.1
  • 11
    • 36449008603 scopus 로고
    • Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon
    • McKee, R. A., Walker, F. J., Conner, J. R., Specht, E. D. & Zelmon, D. E. Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon. Appl. Phys. Lett. 59, 782-784 (1991).
    • (1991) Appl. Phys. Lett. , vol.59 , pp. 782-784
    • McKee, R.A.1    Walker, F.J.2    Conner, J.R.3    Specht, E.D.4    Zelmon, D.E.5
  • 13
    • 65249136446 scopus 로고    scopus 로고
    • A ferroelectric oxide made directly on silicon
    • Warusawithana, M. P. et al. A ferroelectric oxide made directly on silicon. Science 324, 367-370 (2009).
    • (2009) Science , vol.324 , pp. 367-370
    • Warusawithana, M.P.1
  • 14
    • 81555220958 scopus 로고    scopus 로고
    • Academic and industry research progress in germanium nanodevices
    • Pillarisetty, R. Academic and industry research progress in germanium nanodevices. Nature 479, 324-328 (2011).
    • (2011) Nature , vol.479 , pp. 324-328
    • Pillarisetty, R.1
  • 15
    • 84865149451 scopus 로고    scopus 로고
    • N-type doping of germanium from phosphine: Early stages resolved at the atomic level
    • Scappucci, G. et al. n-type doping of germanium from phosphine: early stages resolved at the atomic level. Phys. Rev. Lett. 109, 076101 (2012).
    • (2012) Phys. Rev. Lett. , vol.109 , pp. 076101
    • Scappucci, G.1
  • 16
    • 84877912644 scopus 로고    scopus 로고
    • Evidence of trigonal dangling bonds at the Ge(111)/Oxide interface by electrically detected magnetic resonance
    • Paleari, S., Baldovino, S., Molle, A. & Fanciulli, M. Evidence of trigonal dangling bonds at the Ge(111)/Oxide interface by electrically detected magnetic resonance. Phys. Rev. Lett. 110, 206101 (2013).
    • (2013) Phys. Rev. Lett. , vol.110 , pp. 206101
    • Paleari, S.1    Baldovino, S.2    Molle, A.3    Fanciulli, M.4
  • 18
    • 0035919629 scopus 로고    scopus 로고
    • Physical structure and inversion charge at a semiconductor interface with a crystalline oxide
    • McKee, R. A., Walker, F. J. & Chisholm, M. F. Physical structure and inversion charge at a semiconductor interface with a crystalline oxide. Science 293, 468-471 (2001).
    • (2001) Science , vol.293 , pp. 468-471
    • McKee, R.A.1    Walker, F.J.2    Chisholm, M.F.3
  • 19
    • 79952407229 scopus 로고    scopus 로고
    • 3 single crystals on Ge-on-Si(001) substrate
    • 3 single crystals on Ge-on-Si(001) substrate. Appl. Phys. Lett. 98, 092901 (2011).
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 092901
    • Merckling, C.1
  • 22
    • 84923077119 scopus 로고    scopus 로고
    • A chemical route to monolithic integration of crystalline oxides on semiconductors
    • McDaniel, M. D. et al. A chemical route to monolithic integration of crystalline oxides on semiconductors. Adv. Mater. Interfaces 1, 1400081 (2014).
    • (2014) Adv. Mater. Interfaces , vol.1 , pp. 1400081
    • McDaniel, M.D.1
  • 23
    • 58849100463 scopus 로고    scopus 로고
    • 3 buffered GaAs by laser molecular beam epitaxy
    • 3 buffered GaAs by laser molecular beam epitaxy. Appl. Phys. Lett. 94, 032905 (2009).
    • (2009) Appl. Phys. Lett. , vol.94 , pp. 032905
    • Huang, W.1    Wu, Z.P.2    Hao, J.H.3
  • 26
    • 0037233037 scopus 로고    scopus 로고
    • The surface science of titanium dioxide
    • Diebold, U. The surface science of titanium dioxide. Surf. Sci. Rep. 48, 53-229 (2003).
    • (2003) Surf. Sci. Rep. , vol.48 , pp. 53-229
    • Diebold, U.1
  • 28
    • 84878367299 scopus 로고    scopus 로고
    • Preparation of clean Ge(100) surface using oxygen plasma cleaning
    • Ponath, P., Posadas, A. B., Hatch, R. C. & Demkov, A. A. Preparation of clean Ge(100) surface using oxygen plasma cleaning. J. Vac. Sc. Technol. B 31, 031201 (2013).
    • (2013) J. Vac. Sc. Technol. B , vol.31 , pp. 031201
    • Ponath, P.1    Posadas, A.B.2    Hatch, R.C.3    Demkov, A.A.4
  • 29
    • 36048958608 scopus 로고    scopus 로고
    • The band excitation method in scanning probe microscopy for rapid mapping of energy dissipation on the nanoscale
    • Jesse, S., Kalinin, S. V., Proksch, R., Baddorf, A. P. & Rodriguez, B. J. The band excitation method in scanning probe microscopy for rapid mapping of energy dissipation on the nanoscale. Nanotechnology 18, 435503 (2007).
    • (2007) Nanotechnology , vol.18 , pp. 435503
    • Jesse, S.1    Kalinin, S.V.2    Proksch, R.3    Baddorf, A.P.4    Rodriguez, B.J.5
  • 31
    • 32444433547 scopus 로고    scopus 로고
    • Switching spectroscopy piezoresponse force microscopy of ferroelectric materials
    • Jesse, S., Baddorf, A. P. & Kalinin, S. V. Switching spectroscopy piezoresponse force microscopy of ferroelectric materials. Appl. Phys. Lett. 88, 062908 (2006).
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 062908
    • Jesse, S.1    Baddorf, A.P.2    Kalinin, S.V.3
  • 35
    • 0036526476 scopus 로고    scopus 로고
    • Quantitative complex electrical impedance microscopy by scanning evanescent microwave microscope
    • Xiang, X. D. & Gao, C. Quantitative complex electrical impedance microscopy by scanning evanescent microwave microscope. Mater. Charact. 48, 117-125 (2002).
    • (2002) Mater. Charact. , vol.48 , pp. 117-125
    • Xiang, X.D.1    Gao, C.2
  • 36
    • 0036639754 scopus 로고    scopus 로고
    • High-frequency near-field microscopy
    • Rosner, B. T. & van derWeide, D. W. High-frequency near-field microscopy. Rev. Sci. Instrum. 73, 2505-2525 (2002).
    • (2002) Rev. Sci. Instrum. , vol.73 , pp. 2505-2525
    • Rosner, B.T.1    Van Derweide, D.W.2
  • 37
    • 46449101563 scopus 로고    scopus 로고
    • Modeling and characterization of a cantilever-based near-field scanning microwave impedance microscope
    • Lai, K., Kundhikanjana, W., Kelly, M. & Shen, Z. X. Modeling and characterization of a cantilever-based near-field scanning microwave impedance microscope. Rev. Sci. Instrum. 79, 063703 (2008).
    • (2008) Rev. Sci. Instrum. , vol.79 , pp. 063703
    • Lai, K.1    Kundhikanjana, W.2    Kelly, M.3    Shen, Z.X.4
  • 38
    • 84866780960 scopus 로고    scopus 로고
    • Nanoscale microwave microscopy using shielded cantilever probes
    • Lai, K., Kundhikanjana, W., Kelly, M. & Shen, Z. X. Nanoscale microwave microscopy using shielded cantilever probes. Appl. Nanosci. 1, 13-18 (2011).
    • (2011) Appl. Nanosci. , vol.1 , pp. 13-18
    • Lai, K.1    Kundhikanjana, W.2    Kelly, M.3    Shen, Z.X.4
  • 39
    • 84867948005 scopus 로고    scopus 로고
    • Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging
    • Yang, Y. et al. Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging. J. Micromech. Microeng. 22, 115040 (2012).
    • (2012) J. Micromech. Microeng. , vol.22 , pp. 115040
    • Yang, Y.1
  • 40
    • 12844286241 scopus 로고
    • Ab initio molecular dynamics for liquid metals
    • Kresse, G. & Hafner, J. Ab initio molecular dynamics for liquid metals. Phys. Rev. B 47, 558-561 (1993).
    • (1993) Phys. Rev. B , vol.47 , pp. 558-561
    • Kresse, G.1    Hafner, J.2
  • 41
    • 27744460065 scopus 로고
    • Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium
    • Kresse, G. & Hafner, J. Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium. Phys. Rev. B 49, 14251-14271 (1994).
    • (1994) Phys. Rev. B , vol.49 , pp. 14251-14271
    • Kresse, G.1    Hafner, J.2
  • 42
    • 0030190741 scopus 로고    scopus 로고
    • Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
    • Kresse, G. & Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mat. Sci. 6, 15-50 (1996).
    • (1996) Comput. Mat. Sci. , vol.6 , pp. 15-50
    • Kresse, G.1    Furthmüller, J.2
  • 43
    • 2442537377 scopus 로고    scopus 로고
    • Efficient iterative scheme for ab initio total energy calculations using a plane-wave basis set
    • Kresse, G. & Furthmüller, J. Efficient iterative scheme for ab initio total energy calculations using a plane-wave basis set. J. Phys. Rev. B 54, 11169-11186 (1996).
    • (1996) J. Phys. Rev. B , vol.54 , pp. 11169-11186
    • Kresse, G.1    Furthmüller, J.2
  • 44
    • 25744460922 scopus 로고
    • Projector augmented-wave method
    • Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953-17979 (1994).
    • (1994) Phys. Rev. B , vol.50 , pp. 17953-17979
    • Blöchl, P.E.1
  • 45
    • 0011236321 scopus 로고    scopus 로고
    • From ultrasoft pseudopotentials to the projector augmented-wave method
    • Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758-1775 (1999).
    • (1999) Phys. Rev. B , vol.59 , pp. 1758-1775
    • Kresse, G.1    Joubert, D.2
  • 46
    • 26144450583 scopus 로고
    • Self-interaction correction to density-functional approximations for many-electron systems
    • Perdew, J. P. & Zunger, A. Self-interaction correction to density-functional approximations for many-electron systems. Phys. Rev. B 23, 5048-5079 (1981).
    • (1981) Phys. Rev. B , vol.23 , pp. 5048-5079
    • Perdew, J.P.1    Zunger, A.2
  • 47
    • 1842816907 scopus 로고
    • Special points for Brillouin-zone integration
    • Monkhorst, H. J. & Pack, J. D. Special points for Brillouin-zone integration. Phys. Rev. B 13, 5188-5192 (1976).
    • (1976) Phys. Rev. B , vol.13 , pp. 5188-5192
    • Monkhorst, H.J.1    Pack, J.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.