Ferroelectric field effect transistors for memory applications

Advanced Materials

Volumn 22, Issue 26-27, 2010, Pages 2957-2961

  Hoffman, Jason ^a   Pan, Xiao ^a   Reiner, James W ^a   Walker, Fred J ^a   Han, J P ^b   Ahn, Charles H ^a   Ma, T P ^a  

^a Yale University   (United States)

^b Infineon Technologies Joint Development Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITOR-LESS; CONDUCTING CHANNELS; DIGITAL MEMORY; FERROELECTRIC CAPACITORS; FERROELECTRIC FIELD EFFECT TRANSISTORS; FERROELECTRIC POLARIZATION; MEMORY APPLICATIONS; MEMORY ARCHITECTURE; NON-VOLATILE; POLARIZATION STATE; RESEARCH TOPICS; SILICON ELECTRONICS;

CAPACITANCE; CAPACITORS; ELECTRON MULTIPLIERS; FERROELECTRICITY; POLARIZATION;

FIELD EFFECT TRANSISTORS;

METAL; OXIDE;

ARTICLE; CHEMISTRY; SEMICONDUCTOR;

METALS; OXIDES; TRANSISTORS, ELECTRONIC;

EID: 77955345514     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.200904327     Document Type: Article

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