Raman characterization of defects and dopants in graphene

Journal of Physics Condensed Matter

Volumn 27, Issue 8, 2015, Pages

  Beams, Ryan ^a   Gustavo Cançado, Luiz ^b   Novotny, Lukas ^c  

^a UNIVERSITY OF ROCHESTER   (United States)

^b FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^c ETH ZURICH   (Switzerland)

Author keywords

defects; dopants; grapheme; Raman scattering

Indexed keywords

CARRIER CONCENTRATION; DEFECT DENSITY; DEFECTS; DOPING (ADDITIVES); GRAIN BOUNDARIES; GRAPHENE; POINT DEFECTS; RAMAN SCATTERING; RAMAN SPECTROSCOPY;

DEFECT TYPE; DEVICE APPLICATION; DOPING TECHNIQUES; FIGURES OF MERITS; GRAPHEME; NOVEL MATERIAL SYSTEM; RAMAN CHARACTERIZATION; RAMAN STUDIES;

GRAPHENE DEVICES;

EID: 84922566772     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/27/8/083002     Document Type: Review

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