Graphene field-effect transistors

Journal of Physics D: Applied Physics

Volumn 44, Issue 31, 2011, Pages

  Reddy, Dharmendar ^a   Register, Leonard F ^a   Carpenter, Gary D ^b   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b IBM AUSTIN RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEYOND CMOS; CARBON SHEETS; CHEMICAL VAPOUR DEPOSITION; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DEVICE APPLICATION; DRAIN VOLTAGE; ELECTRON HOLE; EMERGING MATERIALS; GATE CONTROL; HIGH CARRIER MOBILITY; ILLUSTRATIVE EXAMPLES; MECHANICAL EXFOLIATION; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOSFET PERFORMANCE; MOSFETS; NOVEL DEVICES; OFF-STATE LEAKAGE CURRENT; ROOM TEMPERATURE; SEMICONDUCTOR INDUSTRY; THERMAL VELOCITY;

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DRAIN CURRENT; FIELD EFFECT SEMICONDUCTOR DEVICES; GRAPHENE; LEAKAGE CURRENTS; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; VANADIUM;

TRANSISTORS;

EID: 79960860461     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/31/313001     Document Type: Review

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