Molecular doping of graphene

Nano Letters

Volumn 8, Issue 1, 2008, Pages 173-177

  Wehling, T O ^a   Novoselov, K S ^b   Morozov, S V ^c   Vdovin, E E ^c   Katsnelson, M I ^d   Geim, A K ^b   Lichtenstein, A I ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^d RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBATES; AROMATIC COMPOUNDS; CHEMICAL SENSORS; ELECTRON MOBILITY; NANOSTRUCTURED MATERIALS;

ATOMIC THICKNESS; DENSITY OF STATES (DOS); GRAPHENE; MOLECULAR DOPING; SILICON ELECTRONICS;

GRAPHITE;

EID: 38749096585     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl072364w     Document Type: Article

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25. The energies of the POMO spin up and down orbitais relative to the Dirac points predicted by LDA are -0.5eV and -1.4eV, respectively, i.e., in almost quantitative agreement with the GGA results.
26. LDA locates these LUMOs between 2 meV and 210 meV above the Dirac point.
27. G) was observed when visiting large gate voltages (above 40 V) For the sweep rates used in our experiments (15 V/min), the typical hysteresis was 1.5 V; however, it could be as high as 5 V if the time spent at high voltages was too long. Such hysteresis has been discussed in refs 23 and 24, but the exact cause of this effect is beyond the scope of this paper. Here, we always present the data obtained during sweeps from negative to positive voltages (-45 V → +45 V), and we always made sure that the time spent at -45 V was kept at a minimum.
28. The broadness of the impurity levels does not strongly influence the simulations.