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Volumn 13, Issue 12, 2013, Pages 6170-6175

The dependence of graphene Raman D-band on carrier density

Author keywords

carrier density; defect; doping; Graphene; Raman spectroscopy

Indexed keywords

ELECTRON-DOPING; ELECTRONIC CHARACTERISTICS; FULL WIDTH HALF MAXIMUM; INTEGRAL PART; INTENSITY RATIO; QUANTUM INTERFERENCE; RAMAN D-BAND; STRONG DEPENDENCES;

EID: 84890324443     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4035048     Document Type: Article
Times cited : (158)

References (42)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.