Gate modulated Raman spectroscopy of graphene and carbon nanotubes

Solid State Communications

Volumn 175-176, Issue , 2013, Pages 18-34

  Saito, R ^a   Sato, K ^a   Araujo, P T ^b   Mafra, D L ^b   Dresselhaus, M S ^b,c  

^a TOHOKU UNIVERSITY   (Japan)

^b Department of Electrical Engineering and Computer Science   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

A. Carbon nanotubes; A. Graphene; D. Double resonance Raman spectra; E. Gate modulated Raman spectroscopy

Indexed keywords

BILAYER GRAPHENE; DOUBLE RESONANCE; GATE VOLTAGES; INTERLAYER INTERACTIONS; METALLIC CARBON NANOTUBES; OPTICAL PROCESS; PHONON MODE; RAMAN MEASUREMENTS;

CARBON NANOTUBES; ELECTRON-ELECTRON INTERACTIONS; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY;

GRAPHENE;

EID: 84890035256     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2013.05.010     Document Type: Article

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