Photoinduced doping in heterostructures of graphene and boron nitride

Nature Nanotechnology

Volumn 9, Issue 5, 2014, Pages 348-352

  Ju, L ^a   Velasco, J ^a   Huang, E ^a   Kahn, S ^a   Nosiglia, C ^a   Tsai, Hsin Zon ^a   Yang, W ^b   Taniguchi, T ^c   Watanabe, K ^c   Zhang, Y ^d   Zhang, G ^b   Crommie, M ^a,e   Zettl, A ^a,e   Wang, F ^a,e  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INSTITUTE OF PHYSICS   (China)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d FUDAN UNIVERSITY   (China)

^e LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; CHARGE TRANSFER; GRAPHENE; HALL MOBILITY; HETEROJUNCTIONS; HOLE MOBILITY; III-V SEMICONDUCTORS; NITRIDES; VAN DER WAALS FORCES;

DEVICE FUNCTIONALITY; ELECTRICAL RESPONSE; ELECTRICAL TRANSPORT; HIGH CARRIER MOBILITY; OPTICAL AND MECHANICAL PROPERTIES; PHOTOINDUCED DOPING; SEMICONDUCTOR HETEROJUNCTIONS; TWO-DIMENSIONAL CRYSTALS;

SEMICONDUCTOR DOPING;

BORON; GRAPHENE;

ARTICLE; DYNAMICS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTOR; MODULATION; PHOTON; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 84901250130     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2014.60     Document Type: Article

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