Tuning of graphene properties via controlled exposure to electron beams

IEEE Transactions on Nanotechnology

Volumn 10, Issue 4, 2011, Pages 865-870

  Liu, Guanxiong ^a   Teweldebrhan, Desalegne ^a   Balandin, Alexander A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Defects in graphene; disordered graphene; electron beam (e beam) irradiation; graphene devices; Raman spectroscopy

Indexed keywords

BI-LAYER; CONTROLLED MODIFICATION; DEFECT ENGINEERING; DISORDERED GRAPHENE; E-BEAM IRRADIATION; E-BEAM LITHOGRAPHY; ELECTRON-BEAM (E-BEAM) IRRADIATION; ELECTRONIC APPLICATION; GRAPHENE DEVICES; IRRADIATION DOSE; NANO-DEVICES; RAMAN SPECTRUM; SINGLE LAYER;

CARRIER MOBILITY; DEFECTS; ELECTRIC PROPERTIES; ELECTRON BEAMS; ELECTRONS; IRRADIATION; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TUNING;

GRAPHENE;

EID: 79952259831     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2087391     Document Type: Article

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