메뉴 건너뛰기




Volumn 7, Issue 3, 2014, Pages 338-344

Tunable D peak in gated graphene

Author keywords

defects; doping; electrochemistry; gating; graphene

Indexed keywords


EID: 84897021539     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-013-0399-2     Document Type: Article
Times cited : (23)

References (41)
  • 5
    • 33846352893 scopus 로고    scopus 로고
    • Non-adiabatic Kohn-anomaly in a doped graphene monolayer
    • Lazzeri, M.; Mauri, F. Non-adiabatic Kohn-anomaly in a doped graphene monolayer. Phys. Rev. Lett. 2006, 97, 266407.
    • (2006) Phys. Rev. Lett. , vol.97 , pp. 266407
    • Lazzeri, M.1    Mauri, F.2
  • 10
    • 84856948941 scopus 로고    scopus 로고
    • Raman spectroscopy of graphene and bilayer under biaxial strain: Bubbles and balloons
    • Zabel, J.; Nair, R. R.; Ott, A.; Georgiou, T.; Geim, A. K.; Novoselov, K. S.; Casiraghi, C. Raman spectroscopy of graphene and bilayer under biaxial strain: Bubbles and balloons. Nano Lett. 2012, 12, 617-621.
    • (2012) Nano Lett. , vol.12 , pp. 617-621
    • Zabel, J.1    Nair, R.R.2    Ott, A.3    Georgiou, T.4    Geim, A.K.5    Novoselov, K.S.6    Casiraghi, C.7
  • 15
    • 84880850996 scopus 로고    scopus 로고
    • Raman study on defective graphene: Effect of the excitation energy, type, and amount of defects
    • Eckmann, A.; Felten, A.; Verzhbitskiy, I.; Davey, R.; Casiraghi, C. Raman study on defective graphene: Effect of the excitation energy, type, and amount of defects. Phys. Rev. B2013, 88, 035426.
    • (2013) Phys. Rev. B , vol.88 , pp. 035426
    • Eckmann, A.1    Felten, A.2    Verzhbitskiy, I.3    Davey, R.4    Casiraghi, C.5
  • 23
    • 70350116947 scopus 로고    scopus 로고
    • Calculation of the Raman G peak intensity in monolayer graphene: Role of Ward identities
    • Basko, D. M. Calculation of the Raman G peak intensity in monolayer graphene: Role of Ward identities. New J. Phys. 2009, 11, 095011.
    • (2009) New J. Phys. , vol.11 , pp. 095011
    • Basko, D.M.1
  • 24
    • 78049342778 scopus 로고    scopus 로고
    • The influence of strong electron and hole doping on the Raman intensity of chemical vapor-deposition graphene
    • Kalbac, M.; Reina-Cecco, A.; Farhat, H.; Kong, J.; Kavan, L.; Dresselhaus, M. S. The influence of strong electron and hole doping on the Raman intensity of chemical vapor-deposition graphene. ACS Nano2010, 4, 6055-6063.
    • (2010) ACS Nano , vol.4 , pp. 6055-6063
    • Kalbac, M.1    Reina-Cecco, A.2    Farhat, H.3    Kong, J.4    Kavan, L.5    Dresselhaus, M.S.6
  • 26
    • 84864230093 scopus 로고    scopus 로고
    • Phonon self-energy corrections to nonzero wave-vector phonon modes in single-layer graphene
    • Araujo, P. T.; Mafra, D. L.; Sato, K.; Saito, R.; Kong, J.; Dresselhaus, M. S. Phonon self-energy corrections to nonzero wave-vector phonon modes in single-layer graphene. Phys. Rev. Lett. 2012, 109, 046801.
    • (2012) Phys. Rev. Lett. , vol.109 , pp. 046801
    • Araujo, P.T.1    Mafra, D.L.2    Sato, K.3    Saito, R.4    Kong, J.5    Dresselhaus, M.S.6
  • 28
    • 71149088512 scopus 로고    scopus 로고
    • Probing disorder and charged impurities in graphene by Raman spectroscopy
    • Casiraghi, C. Probing disorder and charged impurities in graphene by Raman spectroscopy. Phys. Status Solidi RRL2009, 3, 175-177.
    • (2009) Phys. Status Solidi RRL , vol.3 , pp. 175-177
    • Casiraghi, C.1
  • 29
    • 77649176721 scopus 로고    scopus 로고
    • Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene
    • Basko, D. M.; Piscanec, S.; Ferrari, A. C. Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene. Phys. Rev. B2009, 80, 165413.
    • (2009) Phys. Rev. B , vol.80 , pp. 165413
    • Basko, D.M.1    Piscanec, S.2    Ferrari, A.C.3
  • 30
    • 77954740529 scopus 로고    scopus 로고
    • Doping dependence of the Raman peaks intensity of graphene close to the Dirac point
    • Casiraghi, C. Doping dependence of the Raman peaks intensity of graphene close to the Dirac point. Phys. Rev. B2009, 80, 233407.
    • (2009) Phys. Rev. B , vol.80 , pp. 233407
    • Casiraghi, C.1
  • 31
    • 61749087521 scopus 로고    scopus 로고
    • Chemical functionalization of graphene with defects
    • Boukhvalov, D. W.; Katsnelson, M. I. Chemical functionalization of graphene with defects. Nano Lett. 2008, 8, 4373-4379.
    • (2008) Nano Lett. , vol.8 , pp. 4373-4379
    • Boukhvalov, D.W.1    Katsnelson, M.I.2
  • 33
    • 34047096825 scopus 로고    scopus 로고
    • A comparative investigation of thickness measurements of ultra-thin water films by scanning probe techniques
    • Opitz, A.; Scherge, M.; Ahmed, S. I.-U.; Schaefer, J. A. A comparative investigation of thickness measurements of ultra-thin water films by scanning probe techniques. J. Appl. Phys. 2007, 101, 064310.
    • (2007) J. Appl. Phys. , vol.101 , pp. 064310
    • Opitz, A.1    Scherge, M.2    Ahmed, S.I.-U.3    Schaefer, J.A.4
  • 40
    • 55549145154 scopus 로고    scopus 로고
    • Solution-gated epitaxial graphene as pH sensor
    • Ang, P. K.; Chen, W.; Wee, A. T. S.; Loh, K. P. Solution-gated epitaxial graphene as pH sensor. J. Am. Chem. Soc. 2008, 130, 14392-14393.
    • (2008) J. Am. Chem. Soc. , vol.130 , pp. 14392-14393
    • Ang, P.K.1    Chen, W.2    Wee, A.T.S.3    Loh, K.P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.