Microwave annealing effect for highly reliable biosensor: Dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor

ACS Applied Materials and Interfaces

Volumn 6, Issue 24, 2014, Pages 22680-22686

  Lee, In Kyu ^a   Lee, Kwan Hyi ^b   Lee, Seok ^b   Cho, Won Ju ^a  

^a Kwangwoon University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

a InGaZnO; biosensor; dual gate ISFET; microwave annealing; reliability

Indexed keywords

ANNEALING; BIOSENSORS; CHEMICAL STABILITY; GALLIUM COMPOUNDS; ION SENSITIVE FIELD EFFECT TRANSISTORS; MICROWAVE HEATING; MICROWAVES; RELIABILITY; SEMICONDUCTING INDIUM COMPOUNDS; SLOPE STABILITY; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; ZINC COMPOUNDS;

AMORPHOUSINGAZNO (A-IGZO); DUAL GATES; HIGH FIELD EFFECT MOBILITY; INGAZNO; LOW THRESHOLD VOLTAGE; MICROWAVE ANNEALING; THIN-FILM TRANSISTOR (TFTS); THRESHOLD-VOLTAGE INSTABILITIES;

THIN FILM TRANSISTORS;

EID: 84919903158     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am506805a     Document Type: Article

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