Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

Applied Physics Letters

Volumn 101, Issue 13, 2012, Pages

  Teng, Li Feng ^a   Liu, Po Tsun ^a   Lo, Yuan Jou ^a   Lee, Yao Jen ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INGAZNO; AMORPHOUS OXIDE SEMICONDUCTOR (AOS); ELECTRICAL CHARACTERISTIC; FURNACE ANNEALING; LOW THERMAL BUDGET; MICROWAVE ANNEALING; PHYSICAL MECHANISM; SUBTHRESHOLD SWING;

FIELD EFFECT TRANSISTORS; MICROWAVE HEATING; THIN FILM TRANSISTORS;

AMORPHOUS MATERIALS;

EID: 84883198042     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4754627     Document Type: Article

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