Drift and Hysteresis Effects on AlN/SiO2 Gate pH Ion-Sensitive Field-Effect Transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 8, 2003, Pages 4973-4977

  Chiang, Jung Lung ^a   Chou, Jung Chuan ^b   Chen, Ying Chung ^c   Liau, Guo Shiang ^b   Cheng, Chien Chuan ^d  

^a CHUNG CHOU INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d DE LIN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

AlN; Drift; Hysteresis; pH ISFET

Indexed keywords

ELECTRIC POTENTIAL; GATES (TRANSISTOR); HYSTERESIS; PH;

DRIFT EFFECTS;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 0142012140     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.4973     Document Type: Article

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