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Volumn 4, Issue 10, 2012, Pages 5369-5374

Effect of the electrode materials on the drain-bias stress instabilities of In-Ga-Zn-O thin-film transistors

Author keywords

bias stress; device reliability; electrode; In Ga Zn O; oxide semiconductor; thin film transistor

Indexed keywords

BARRIER LAYERS; BIAS STRESS; BOTTOM-CONTACT; DEVICE RELIABILITY; DEVICE STABILITY; ELECTRODE MATERIAL; GATE-BIAS STRESS; IN-GA-ZN-O; INDIUM TIN OXIDE; NANO SCALE; NEGATIVE SHIFT; OXIDE SEMICONDUCTOR; STRESS CONDITION; TEMPERATURE ANNEALING; THIN-FILM TRANSISTOR (TFTS); TITANIUM ELECTRODES; TRANSFER CHARACTERISTICS; TYPICAL VALUES; UNDER GATE;

EID: 84867812399     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am301253x     Document Type: Article
Times cited : (26)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.