Effects of microwave annealing on nitrogenated amorphous in-Ga-Zn-O thin-film transistor for low thermal budget process application

IEEE Electron Device Letters

Volumn 34, Issue 9, 2013, Pages 1157-1159

  Fuh, Chur Shyang ^a   Liu, Po Tsun ^a   Teng, Li Feng ^a   Huang, Sih Wei ^a   Lee, Yao Jen ^b   Shieh, Han Ping D ^a   Sze, Simon M ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Flexible thin film transistor (TFT); In Ga Zn O thin film transistor (IGZO TFT); postannealing

Indexed keywords

C. THIN FILM TRANSISTOR (TFT); LOW THERMAL BUDGET; MICROWAVE ANNEALING; POST ANNEALING; PROCESS APPLICATIONS; SELECTIVE HEATING; THIN-FILM TRANSISTOR (TFTS); TRANSPARENT CONDUCTIVE OXIDES;

AMORPHOUS MATERIALS; BUDGET CONTROL; GALLIUM; MICROWAVE MATERIALS PROCESSING; SEMICONDUCTING INDIUM COMPOUNDS; ZINC;

THIN FILM TRANSISTORS;

EID: 84883152697     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2272311     Document Type: Article

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