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Volumn 6, Issue 12, 2013, Pages

Enhanced sensing properties of fully depleted silicon-on-insulator-based extended-gate field-effect transistor with dual-gate operation

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVE COUPLING EFFECTS; DRIFT EFFECTS; EXTENDED-GATE FIELD-EFFECT TRANSISTORS; FULLY DEPLETED; HYSTERESIS PHENOMENON; PH SENSITIVITY; SENSING PROPERTY; SILICON-ON-INSULATORS;

EID: 84890740858     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.6.127001     Document Type: Article
Times cited : (5)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.