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Volumn 6, Issue 12, 2013, Pages
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Enhanced sensing properties of fully depleted silicon-on-insulator-based extended-gate field-effect transistor with dual-gate operation
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITIVE COUPLING EFFECTS;
DRIFT EFFECTS;
EXTENDED-GATE FIELD-EFFECT TRANSISTORS;
FULLY DEPLETED;
HYSTERESIS PHENOMENON;
PH SENSITIVITY;
SENSING PROPERTY;
SILICON-ON-INSULATORS;
MOSFET DEVICES;
PH SENSORS;
SILICON ON INSULATOR TECHNOLOGY;
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EID: 84890740858
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.7567/APEX.6.127001 Document Type: Article |
Times cited : (5)
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References (27)
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