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Journal of Alloys and Compounds

Volumn 507, Issue 1, 2010, Pages

Flexible a-IZO thin film transistors fabricated by solution processes

(2) Cheng, Hua Chi a Tsay, Chien Yie b

a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

b FENG CHIA UNIVERSITY (Taiwan)

Author keywords

Amorphous oxide semiconductors; Flexible TFTs; IZO; Microwave heating

Indexed keywords

ACTIVATION ENERGY; FIELD EFFECT TRANSISTORS; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; MICROWAVE HEATING; OXIDE SEMICONDUCTORS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

ACTIVE CHANNEL LAYERS; AMBIENT AIR CONDITIONS; AMORPHOUS INDIUM ZINC OXIDE (A-IZO); AMORPHOUS OXIDE SEMICONDUCTOR (AOS); CONDUCTING ELECTRODES; FIELD-EFFECT MOBILITIES; FLEXIBLE TFTS; INORGANIC COMPONENTS;

THIN FILM TRANSISTORS;

EID: 77956616784 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.06.166 Document Type: Letter

Times cited : (72)

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