Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors

Applied Physics Letters

Volumn 98, Issue 4, 2011, Pages

  Spijkman, M ^a,b   Smits, E C P ^c   Cillessen, J F M ^a   Biscarini, F ^d   Blom, P W M ^b,c   De Leeuw, D M ^a,b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b UNIVERSITY OF GRONINGEN   (Netherlands)

^c HOLST CENTRE   (Netherlands)

^d CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM GATE; ELECTROCHEMICAL POTENTIAL; GATE FIELD; NERNST EQUATION; ORDERS OF MAGNITUDE; ZNO;

GATE DIELECTRICS; GATES (TRANSISTOR); ION SENSITIVE FIELD EFFECT TRANSISTORS; SELF ASSEMBLED MONOLAYERS; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 79551619188     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3546169     Document Type: Article

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