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Volumn 52, Issue 6 PART 2, 2013, Pages

Comparative study of device performance and reliability in amorphous ingazno thin-film transistors with various high-k gate dielectrics

(5) Lee, In Kyu a Lee, Se Won a Gu, Ja Gyeong a Kim, Kwan Su a Cho, Won Ju a

a Kwangwoon University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE INSTABILITIES; ELECTRICAL CHARACTERISTIC; HIGH DIELECTRIC CONSTANTS; HIGH-K GATE DIELECTRICS; ON/OFF CURRENT RATIO; POSITIVE BIAS TEMPERATURES; THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS;

ALUMINUM; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; THRESHOLD VOLTAGE; ZIRCONIUM ALLOYS;

THIN FILM TRANSISTORS;

EID: 84880972980 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.06GE05 Document Type: Conference Paper

Times cited : (33)

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