SCOPUS 정보 검색 플랫폼

Volumn 100, Issue 25, 2012, Pages

Improved sensing performance of polycrystalline-silicon based dual-gate ion-sensitive field-effect transistors using high-k stacking engineered sensing membrane

(3) Jang, Hyun June a Bae, Tae Eon a Cho, Won Ju a

a Kwangwoon University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM GATE; CAPACITIVE COUPLINGS; OPERATION MODE; PH SENSITIVITY; SENSING CHARACTERISTICS; SENSING MARGIN; SENSING MEMBRANES; SENSING PERFORMANCE; SINGLE GATES;

HAFNIUM OXIDES; ION SENSITIVE FIELD EFFECT TRANSISTORS; POLYSILICON;

SILICON OXIDES;

EID: 84863320683 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4729762 Document Type: Article

Times cited : (28)

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