Separate structure extended gate H+-ion sensitive field effect transistor on a glass substrate

Sensors and Actuators, B: Chemical

Volumn 71, Issue 1-2, 2000, Pages 106-111

  Yin, Li Te ^a   Chou, Jung Chuan ^b   Chung, Wen Yaw ^a   Sun, Tai Ping ^c   Hsiung, Shen Kan ^a  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b Department of Electronic Engineering   (Taiwan)

^c NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GLASS; HYSTERESIS; INTERFACES (MATERIALS); IONS; SENSITIVITY ANALYSIS; SUBSTRATES; THIN FILMS;

CONTACT AREA EFFECTS; INDIUM TIN OXIDES GLASS; ION SENSITIVE FIELD EFFECT TRANSISTORS (ISFET);

PH SENSORS;

EID: 0034319818     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(00)00613-4     Document Type: Article

References (20)

1. Bergveld P. Development of an ion sensitive solid-state device for neurophysiological measurements. IEEE Trans. Biomed. Eng. 17:1970;70-71.
2. Clifford D. Fung, Peter W. Cheung, Wen H. Ko, A generalized theory of an electrolyte-insulator-semiconductor field effect transistor, IEEE Trans. Electron Devices 33 (1986) 8-18.
3. Stanley D. Moss, Curtis C. Johnson, Jirijanata, Hydrogen, calcium and potassium ion sensitive FET transistors a preliminary report, IEEE Trans. Biomed. Eng. 25 (1978) 49-54.
4. 2 gate ISFET, in: Proceedings of the Third East Asian Conference on Chemical Sensors, Seoul, South Korea, 5-6 November 1997, pp. 394-400.
5. 2 plasma treatment for pH ISFET applications, in: Proceeding of 1998 International Electron Devices and Materials Symposia, B, C, National Cheng Kung University, Tainan, Taiwan, ROC, December 1998, pp. 267-270.
6. 5 gates of pH sensitive device comparative spectroscopic and electrical studies. Sensors and Actuators B. 17:1989;195-202.
7. Hung-Kwei Liao, Jung-Chuan Chou, Wen-Yaw Chung, Tai-Ping Sun, Shen-Kan Hsiung, Study of amorphous tin oxide thin films for ISFET applications, Sensors and Actuators B 50 (1998) 104-109.
8. pzc and Surface Potential of Tin Oxide Gate ISFET, Mater. Chem. Phys. 2428 (1999) 1-6.
9. M. Esashi, T. Matsuo, Integrated micro multi ion sensor using field effect of semiconductor, IEEE Trans. Biomed. Eng. BME-25 (1978) 182-192.
10. van der Schoot B.H., Bergveld P. ISFET-based enzyme sensors. Biosensors. 3:1987;161-186.
11. Nakamoto S., Ito N., Kuriyama T., Kimura J. A lift-off method for patterning enzyme-immobilized membranes in multi-biosensors. Sensors and Actuators. 13:1988;165-172.
12. Kimara J., Munakami T., Kuriyama T. An integrated multi-biosensor for simultaneous amperometric and potentiometric measurement. Sensors and Actuators. 15:1989;435-443.
13. Hanazato Y., Nakako M., Shinon S., Maeda M. Integrated multi-biosensors based on an ion-sensitive field-effect transistor using photolithographic technique. IEEE Trans. Electron Devices. 36:1989;1303-1310.
14. 2-Si structure. Sensors and Actuators B. 13-14:1993;653-654.
15. 2-Si structure. Sensors and Actuators B. 44:1997;361-364.
16. Van der Spiegel J., Lauks I., Chan P., Babic D. The extended gate chemical sensitive field effect transistor as multi-species microprobe. Sensors and Actuators B. 4:1983;291-298.
17. T. Katsube, T. Araki, M. Hara, T. Yaji, Si Kobayashi, K. Suzuki, A multi-species biosensor with extended-gate field effect transistors, in: Proceedings of 6th Sensor Symposium, Tsukuba, Japan, 1986, 211-214.
18. Li-Lun Chi, Jung-Chuan Chou, Wen-Yaw Chung, Tai-Ping Sun, Shen-Kan Hsiung, New structure of ion sensitivite field effect transistor, in: Proceeding of the Biomedical Engineering Society 1998 Annual Symposium, Taiwan, 1998, 332-334.
19. Martinez M.A., Herrero J., Gutierrez M.T. Electrochemical stability of indium tin oxide thin films. Electrochim. Acta. 37:1992;2565-2571.
20. Chopra K.L., Major S., Pandya D.K. Transparent conductors - a status review. Thin Solid Films. 102:1983;1-46.