SOI dual-gate ISFET with variable oxide capacitance and channel thickness

Solid-State Electronics

Volumn 97, Issue , 2014, Pages 2-7

  Park, Jin Kwon ^a   Jang, Hyun June ^a   Park, Jong Tae ^b   Cho, Won Ju ^a  

^a Kwangwoon University   (South Korea)

^b SolarLight Ltd   (South Korea)

Author keywords

Dual gate; ISFET; Oxide capacitance; SOI

Indexed keywords

ION SENSITIVE FIELD EFFECT TRANSISTORS;

BIOSENSOR APPLICATIONS; CAPACITIVE COUPLING EFFECTS; DUAL-GATE; INTENSIVE MEASUREMENTS; OXIDE CAPACITANCE; SENSING CHARACTERISTICS; SILICON-ON-INSULATORS; SOI;

CAPACITANCE;

EID: 84901932119     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2014.04.036     Document Type: Article

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