High-performance a-igzo thin-film transistor using Ta2O 5 gate dielectric

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1245-1247

  Chiu, C J ^a   Chang, S P ^a   Chang, S J ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); high ; Ta 2O5; thin film transistor (TFT)

Indexed keywords

DIELECTRIC LAYER; DRAIN-SOURCE CURRENTS; GATE VOLTAGE SWING; GLASS SUBSTRATES; HIGH FIELD; INDIUM GALLIUM ZINC OXIDES; LOW POWER APPLICATION; ON/OFF RATIO; OPERATING CHARACTERISTICS; ROOM TEMPERATURE; SUBTHRESHOLD; SWITCHING TRANSISTOR; TA 2O5;

AMORPHOUS FILMS; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM; GALLIUM ALLOYS; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM; SUBSTRATES; TANTALUM; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 78049297925     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2066951     Document Type: Article

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