SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 520, Issue 5, 2011, Pages 1489-1494

Role of environmental and annealing conditions on the passivation-free in-Ga-Zn-O TFT

(5) Fuh, Chur Shyang a Sze, Simon Min a Liu, Po Tsun a Teng, Li Feng a Chou, Yi Teh a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

Annealing environment; InGaZnO TFT; Operation model; Reliability mechanism; Thermal annealing

Indexed keywords

ACTIVE REGIONS; ANNEALING ATMOSPHERES; ANNEALING CONDITION; ANNEALING ENVIRONMENT; BACK CHANNELS; FILM QUALITY; HIGHER TEMPERATURES; IN-VACUUM; INGAZNO TFT; MATERIAL ANALYSIS; NEGATIVE GATE; OPERATION MODEL; OUT-DIFFUSION; OXYGEN DEFICIENCY; OXYGEN DIFFUSION; POSITIVE GATE BIAS; SUBTHRESHOLD SWING; THERMAL ANNEALING TREATMENT; THERMAL-ANNEALING;

AMORPHOUS FILMS; GALLIUM; OXYGEN; PASSIVATION; SCANNING ELECTRON MICROSCOPY; THIN FILM TRANSISTORS; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

ANNEALING;

EID: 82755197756 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.08.088 Document Type: Conference Paper

Times cited : (84)

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