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Volumn 5, Issue 2, 2015, Pages 1343-1349
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Direct growth of etch pit-free GaN crystals on few-layer graphene
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL SYMMETRY;
DISLOCATIONS (CRYSTALS);
GALLIUM NITRIDE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
ORGANIC CHEMICALS;
ORGANOMETALLICS;
SAPPHIRE;
SUBSTRATES;
DIRECT GROWTH;
FEW-LAYER GRAPHENE;
GRAPHENE LAYERS;
HEXAGONAL SYMMETRY;
HIGH QUALITY;
METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS;
SAPPHIRE SUBSTRATES;
THREADING DISLOCATION;
GRAPHENE;
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EID: 84916629513
PISSN: None
EISSN: 20462069
Source Type: Journal
DOI: 10.1039/c4ra12557f Document Type: Article |
Times cited : (45)
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References (39)
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