Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1585-1588

  Zang, K Y ^a   Chua, S J ^a,b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC ALUMINA TEMPLATE; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DISLOCATION DENSITIES; ETCH MASK; GAN LAYERS; GAN NANORODS; HIGH QUALITY; LATERAL EPITAXIAL OVERGROWTH; METALORGANIC CHEMICAL VAPOR DEPOSITION; NANO SCALE; NANO-POROUS; ORDERS OF MAGNITUDE; SI (1 1 1); SI SUBSTRATES; SI(111) SUBSTRATE; SOURCE MATERIAL; THREADING DISLOCATION DENSITIES;

ATOMIC FORCE MICROSCOPY; ELECTROMAGNETIC INDUCTION; EPITAXIAL GROWTH; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; NANORODS; NANOSTRUCTURED MATERIALS; ORE TREATMENT; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 77951214947     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778509     Document Type: Conference Paper

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