Thermal activation of beryllium-related photoluminescence by annealing of GaN grown by molecular beam epitaxy

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2204-2207

  Lee, Kyoungnae ^a   VanMil, B L ^a   Luo, Ming ^a   Wang, Lijun ^a   Giles, N C ^a   Myers, T H ^a  

^a WEST VIRGINIA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BERYLLIUM; DOPING (ADDITIVES); HYDROGEN; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE;

DONOR-ACCEPTOR PAIR (DAP);

GALLIUM NITRIDE;

EID: 27344439490     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461574     Document Type: Conference Paper

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