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Volumn 219-220, Issue 1-4, 2004, Pages 792-797
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Carbon doping by ion implantation and C2H6 gas in GaN: Rutherford backscattering/channeling, Raman scattering and photoluminescence studies
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Author keywords
C implantation; GaN; Gas phase doping; Photoluminescence; Raman spectroscopy; Rutherford backscattering spectroscopy
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Indexed keywords
CRYSTAL LATTICES;
DOPING (ADDITIVES);
GALLIUM COMPOUNDS;
HYDROCARBONS;
ION IMPLANTATION;
PHOTOLUMINESCENCE;
RAMAN SPECTROSCOPY;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
C-IMPLANTATION;
GAN;
GAS PHASE DOPING;
CARBON;
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EID: 2342582724
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nimb.2004.01.165 Document Type: Conference Paper |
Times cited : (9)
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References (15)
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