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Volumn 219-220, Issue 1-4, 2004, Pages 792-797

Carbon doping by ion implantation and C2H6 gas in GaN: Rutherford backscattering/channeling, Raman scattering and photoluminescence studies

Author keywords

C implantation; GaN; Gas phase doping; Photoluminescence; Raman spectroscopy; Rutherford backscattering spectroscopy

Indexed keywords

CRYSTAL LATTICES; DOPING (ADDITIVES); GALLIUM COMPOUNDS; HYDROCARBONS; ION IMPLANTATION; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EID: 2342582724     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.165     Document Type: Conference Paper
Times cited : (9)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.