Carbon as an acceptor in cubic GaN/3CSiC

Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 88-90

  Zado, A ^a   Tschumak, E ^a   Gerlach, J W ^b   Lischka, K ^a   As, D J ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

^b LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

Author keywords

Characterization; Doping; Gallium compounds; Molecular beam epitaxy; Nitrides; Semiconducting gallium compounds; Semiconducting IIIV materials

Indexed keywords

BEAM EQUIVALENT PRESSURE; BLUE SHIFT; CAPACITANCE VOLTAGE; CAPACITANCE VOLTAGE MEASUREMENTS; CARBON CONCENTRATIONS; CARBON DOPING; CBR; CURRENT-VOLTAGE MEASUREMENTS; DONOR-ACCEPTOR PAIRS; DOPING; ELECTRICAL PROPERTY; N-TYPE CONDUCTIVITY; ORDERS OF MAGNITUDE; P-TYPE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROSCOPY; SEMI CONDUCTING III-V MATERIALS;

CAPACITANCE; DOPING (ADDITIVES); EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE;

EID: 79958009262     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.12.044     Document Type: Article

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