Raman scattering analysis of GaN with various dislocation densities

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1789-1791

  Kitamura, T ^a   Nakashima, S ^a   Nakamura, N ^a,c   Furuta, K ^b   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b R&D Association for Future Electron Devices   (Japan)

^c NIHON UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; DISLOCATION DENSITIES; GAN CRYSTALS; GAN EPILAYERS; GAN LAYERS; HETEROEPITAXIAL; IN-PLANE; MICRO RAMAN SPECTROSCOPY; MOCVD; PEAK FREQUENCIES; PHONON BANDS; PHONON FREQUENCIES; RAMAN BANDS; RAMAN MAPPING; RAMAN MAPS; RAMAN SHIFT;

CHEMICAL VAPOR DEPOSITION; DEFECTS; EPILAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SINGLE CRYSTALS;

DISLOCATIONS (CRYSTALS);

EID: 73349102664     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778640     Document Type: Conference Paper

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