Preparation of metallized GaN/sapphire cross sections for TEM analysis using wedge polishing

Micron

Volumn 33, Issue 5, 2002, Pages 489-492

  Chen, J ^a   Ivey, D G ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

GaN based semiconductor; Metallization; Transmission electron microscopy; Wedge polishing

Indexed keywords

ARTICLE;

EID: 0036257375     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0968-4328(01)00038-5     Document Type: Article

References (11)