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Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 61-71

Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire

(5) Rouviere, J L a Arlery, M a Daudin, B a Feuillet, G a Briot, O b

a CEA GRENOBLE (France)

b UNIVERSITÉ MONTPELLIER 2 (France)

Author keywords

Buffer layer; Inversion domain boundaries; Translation domain boundaries

Indexed keywords

CRYSTALLOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

INVERSION DOMAIN BOUNDARIES (IDB); TRANSLATION DOMAIN BOUNDARY (TDB);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0347877214 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(97)00169-4 Document Type: Article

Times cited : (78)

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