Highly conducting, transparent, and flexible indium oxide thin film prepared by atomic layer deposition using a new liquid precursor Et2inN(SiMe3)2

ACS Applied Materials and Interfaces

Volumn 6, Issue 20, 2014, Pages 17481-17488

  Maeng, Wan Joo ^a   Choi, Dong Won ^b   Chung, Kwun Bum ^c   Koh, Wonyong ^d   Kim, Gi Yeop ^e,f   Choi, Si Young ^e   Park, Jin Seong ^b  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b Hanyang University   (South Korea)

^c Dongguk University   (South Korea)

^d UP Chemical Corp   (South Korea)

^e Korea Institute of Material Science   (South Korea)

^f Pusan National University   (South Korea)

Author keywords

atomic layer deposition; indium oxide; resistivity; transparent conducting oxide

Indexed keywords

ATOMS; CHEMICAL ANALYSIS; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ENERGY DISSIPATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM COMPOUNDS; INDIUM METALLOGRAPHY; SILICON COMPOUNDS; SPECTROMETERS; THIN FILMS; TIN OXIDES; TRANSPARENT CONDUCTING OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPTH-PROFILE ANALYSIS; ELECTRICAL CONDUCTIVITY; INDIUM OXIDE; INDIUM OXIDE THIN FILMS; INDIUM TIN OXIDE FILMS; OPTICAL SPECTROMETERS; OPTICAL TRANSPARENCY; PHYSICAL AND CHEMICAL PROPERTIES;

ATOMIC LAYER DEPOSITION;

EID: 84908191927     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am502085c     Document Type: Article

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