Changes in electrical and structural properties of indium oxide thin films through post-deposition annealing

Thin Solid Films

Volumn 520, Issue 1, 2011, Pages 110-116

  Kato, Kazuhiro ^a   Omoto, Hideo ^a   Tomioka, Takao ^a   Takamatsu, Atsushi ^a  

^a CENTRAL GLASS CO LTD   (Japan)

Author keywords

Annealing; Carrier Density; Hall Mobility; Indium Oxide; Scattering Centers; Sputtering; Thin Films

Indexed keywords

ANNEALING EFFECTS; ANNEALING TEMPERATURES; D-SPACING; ELECTRICAL AND STRUCTURAL PROPERTIES; ELECTRICAL PROPERTIES AND MICROSTRUCTURE; EXCESS OXYGEN; IDEAL VALUES; INDIUM OXIDE; POST DEPOSITION ANNEALING; SCATTERING CENTERS; SPUTTERING DEPOSITION;

ANNEALING; CARRIER CONCENTRATION; DEPOSITION; ELECTRIC PROPERTIES; ELECTRON ENERGY LOSS SPECTROSCOPY; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; INDIUM; THIN FILMS; VAPOR DEPOSITION;

OXIDE FILMS;

EID: 80054023442     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.06.061     Document Type: Article

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