Enhanced doping efficiency of al-doped ZnO by atomic layer deposition using dimethylaluminum isopropoxide as an alternative aluminum precursor

Chemistry of Materials

Volumn 25, Issue 22, 2013, Pages 4619-4622

  Wu, Y ^a,b   Potts, S E ^a   Hermkens, P M ^a   Knoops, H C M ^a   Roozeboom, F ^a,b   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b HOLST CENTRE   (Netherlands)

Author keywords

Al doped ZnO; atomic layer deposition; doping efficiency; steric hindrance; transparent conducting oxide

Indexed keywords

AL-DOPED ZNO; ALUMINUM PRECURSORS; ATOMIC LEVELS; DOPING EFFICIENCY; ISO-PROPOXIDE; STERIC HINDRANCES; TRANSPARENT CONDUCTING OXIDE; TRIMETHYLALUMINUM;

ATOMIC LAYER DEPOSITION; CHEMICAL REACTIONS; DEPOSITION; EFFICIENCY; SEMICONDUCTOR DOPING; ZINC OXIDE;

ALUMINUM;

EID: 84888619690     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm402974j     Document Type: Article

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